On the afternoon of November 3rd, the Center of Double Helix at Tsinghua SIGS hosted its fifth session of the “X-Seminar Series” in Room 811 of the Information Building. The session featured a distinguished lecture by Associate Professor He Ma from the Beijing University of Technology, who presented a keynote report on “Flexible Vanadium Dioxide Thin Films and Intelligent Devices.” The event was well-attended by over 30 individuals, both in person and virtually. Assistant Professor Kaichen Dong of SIGS facilitated the proceedings.
During his presentation, Professor Ma addressed the challenges in fabricating vanadium dioxide films, which necessitate high-temperature annealing in an oxygen-rich environment—a process that conventional flexible substrates cannot endure. This issue presents a significant obstacle in the integration of vanadium dioxide films with flexible substrates, thereby hindering the advancement of functional devices based on flexible vanadium dioxide films. To overcome this, Professor Ma’s team has developed a method for the controllable fabrication of wafer-level, self-supporting vanadium dioxide films. This innovation enables the transfer of large-area vanadium dioxide films onto any flexible substrate, thereby resolving critical challenges in the development of flexible vanadium dioxide film-based functional devices. Utilizing the significant structural phase transition of vanadium dioxide films, the team has successfully developed flexible functional devices, including micro-actuators and terahertz modulators.
The event concluded with a robust discussion between the participants and Professor Ma, where they explored various aspects of the research, including technological applications and the potential for commercialization. The attendees expressed that the seminar was highly informative and beneficial to their understanding of the subject matter.
